Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells-Reference-Cited by-同舟云学术

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Published:2021-11-15 Issue:20 Volume:119 Page:202103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sang Liwen¹²^ORCID,Sumiya Masatomo³^ORCID,Liao Meiyong⁴^ORCID,Koide Yasuo³^ORCID,Yang Xuelin⁵^ORCID,Shen Bo⁵

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Japan

3. Next Generation Semiconductor Group, National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

5. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China

Funder

Precursory Research for Embryonic Science and Technology

National Key Research and Development Program of China

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0071506

Reference33 articles.

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4. On the design and performance of InGaN/Si double-junction photocathodes

5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

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