Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics-Reference-Cited by-同舟云学术

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Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

Published:2007-01 Issue:1 Volume:101 Page:014503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schaeffer J. K.,Capasso C.,Gregory R.,Gilmer D.,Fonseca L. R. C.,Raymond M.,Happ C.,Kottke M.,Samavedam S. B.,Tobin P. J.,White B. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2395649

Reference34 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Alternative dielectrics to silicon dioxide for memory and logic devices

3. Impact of gate workfunction on device performance at the 50 nm technology node

4. 2001 IEEE International SOI Conference;Cheng B.,2001

5. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions

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