Enhanced minority carrier lifetime in bulk hydrogen-passivated InAsSbBi

Author:

Estévez H Félix A.1ORCID,Bergthold M.1ORCID,Maksimov Oleg2ORCID,Bhandari Harish B.2ORCID,Morath Christian P.3ORCID,Duchane Alexander W.3ORCID,Webster Preston T.3ORCID,Wasserman D.1ORCID

Affiliation:

1. The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758, USA

2. Radiation Monitoring Devices, Inc 2 ., 44 Hunt Street, Watertown, Massachusetts 02472, USA

3. Air Force Research Laboratory, Space Vehicles Directorate 3 , Kirtland Air Force Base, New Mexico 87117, USA

Abstract

We investigate the bulk passivation of the dilute bismide alloy InAsSbBi by plasma-assisted hydrogenation. InAsSbBi is of significant interest for mid- to long-wave infrared photodetection due to its bandgap flexibility and potential integration with heterostructured photodetector architectures. Epitaxially grown InAsSbBi samples are characterized by photoluminescence and time-resolved photoluminescence measurements for a range of hydrogenation conditions. Increases in the minority carrier lifetime of over 3× are reported, with no degradation over a period of months following the treatment. Photoluminescence measurements confirm that the hydrogenation process improves the InAsSbBi optical properties. These results offer a path toward the improved performance of InAsSbBi-based photodetectors and potentially other narrow bandgap semiconductor materials and material systems.

Funder

Air Force Research Laboratory

Sandia National Laboratories

Publisher

AIP Publishing

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