Studies on metal/n-GaAs Schottky barrier diodes: The effects of temperature and carrier concentrations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3110065
Reference31 articles.
1. A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications
2. Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4 GHz
3. The state-of-the-art of GaAs and InP power devices and amplifiers
4. Electrical characteristics of selenium-treated GaAs MIS Schottky diodes
5. Enhancement of Schottky solar cell efficiency above its semiempirical limit
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