Affiliation:
1. National Innovation Platform for the Fusion of Industry and Education in Integrated Circuits, Department of Electronic Science, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
2. Xiamen Changelight Co., Ltd., Xiamen 361101, China
Abstract
The anomalous droop in the external quantum efficiency (EQE) induced by the localization of excitons in GaN/InGaN green micro-light-emitting diodes (micro-LEDs) has been demonstrated at temperatures ranging from 25 to 100 K. At cryogenic temperatures, the random distribution of excitons among local potential energy minima limits the radiative recombination and reduces the EQE of green micro-LEDs. As the temperature increases from 25 to 100 K, the hopping of excitons from shallow potential energy minima to the potential energy valley contributes to the enhancement of radiative recombination. The distribution of excitons among local potential energy minima at cryogenic temperatures is also affected by the current density due to the influence of Coulomb screening of the polarization field and the band-filling effect.
Funder
National Natural Science Foundation of China
Major Science and Technology project of Fujian Province
Natural Science Foundation of Fujian Province
Fundamental Research Funds for the Central Universities
Key Research and Industrialization Projects of Technological Innovation of Fujian Province
Science and Technology Project of Xiamen City
XMU Training Program of Innovation and Enterpreneurship for Undergraduates
Subject
Physics and Astronomy (miscellaneous)
Cited by
4 articles.
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