Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2921795
Reference25 articles.
1. ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2INTERFACES
2. Interface states in SiSiO2 interfaces
3. Measurement of interface‐state parameters near the band edge at the Si/SiO2interface by the conductance method
4. Determination of the capture cross section and degeneracy factor of Si‐SiO2interface states
5. Possible observation of Pb0and Pb1centers at irradiated (100)Si/SiO2interface from electrical measurements
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