Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer
Author:
Affiliation:
1. Asahi-Kasei Corporation, Fuji, Shizuoka 416-8501, Japan
2. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
3. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Japan Society for the Promotion of Science
Core Research for Evolutional Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5095149
Reference48 articles.
1. An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
2. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
3. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
4. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
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