Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation-Reference-Cited by-同舟云学术

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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Published:2021-03-28 Issue:12 Volume:129 Page:121102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Asubar Joel T.¹^ORCID,Yatabe Zenji²^ORCID,Gregusova Dagmar³^ORCID,Hashizume Tamotsu⁴⁵

Affiliation:

1. Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan

2. Faculty of Advanced Science and Technology (FAST), Kumamoto University, Kumamoto 860-8555, Japan

3. Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia

4. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-0813, Japan

5. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8601, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039564

Reference126 articles.

1. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

2. Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

3. Progress on and challenges of p-type formation for GaN power devices

4. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

5. Recent progress of GaN power devices for automotive applications

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2. Interface state density in mist chemical vapor deposited Al₂O₃/AlGaN/GaN structure;Japanese Journal of Applied Physics;2024-08-01

3. SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors;physica status solidi (a);2024-07

4. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED;Journal of Physics D: Applied Physics;2024-06-26

5. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering;Applied Physics Reviews;2024-05-31

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