Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3488825
Reference41 articles.
1. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. III-Nitride Photonics
4. Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
5. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
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