Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells-Reference-Cited by-同舟云学术

Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells

Published:2006-09-25 Issue:13 Volume:89 Page:131910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schörmann J.,Potthast S.,As D. J.,Lischka K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2357587

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4. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates

5. D. J. As, in Optoelectronic Properties of Semiconductors and Superlattices, edited by M. O. Manasreh (Taylor & Francis, New York, 2003), Vol. 19, Chap. 9, pp. 323–450.

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