Tuning the intersubband absorption in strained AlAsSb∕InGaAs quantum wells towards the telecommunications wavelength range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference11 articles.
1. Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs
2. Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP
3. 1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells
4. Femtosecond all-optical devices for ultrafast communication and signal processing
5. Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
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1. Photoluminescence of GaAsSb/AlAsSb superlattices for investigating band structure;Journal of Luminescence;2023-11
2. A Study of Second‐Order Susceptibility in Digital Alloy‐Grown InAs/AlSb Multiple Quantum Wells;Advanced Optical Materials;2022-05-02
3. Theoretical simulation of quantum cascade lasers based on InGaAs/AlInAs and InGaAs/AlAsSb quantum wells;IOP Conference Series: Materials Science and Engineering;2020-05-01
4. Polarized near-infrared intersubband absorptions in CdSe colloidal quantum wells;Nature Communications;2019-10-04
5. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates;Japanese Journal of Applied Physics;2018-04-06
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