Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102737
Reference14 articles.
1. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
2. Band edge offsets in strained (InGa)As-(AlGa)As heterostructures
3. Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grownInxGa1−xAs/GaAs quantum wells
4. Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
5. Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells
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