Ion-implantation in bulk semi-insulating 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370799
Reference21 articles.
1. SiC Power Devices
2. Recent Advances in SiC Power Devices
3. 4H-SiC MESFET's with 42 GHz f/sub max/
4. Silicon Carbide High Frequency Devices
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