Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368217
Reference12 articles.
1. Acceleration Factors for Thin Oxide Breakdown
2. Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics
3. Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films
4. The silicon-silicon dioxide system: Its microstructure and imperfections
5. Electronic Polarizabilities of Ions in Crystals
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