Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range-Reference-Cited by-同舟云学术

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Published:2015-02-16 Issue:7 Volume:106 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Aseev Pavel¹,Rodriguez Paul E. D. Soto¹,Gómez Víctor J.¹,Alvi Naveed ul Hassan¹,Mánuel José M.²,Morales Francisco M.²³,Jiménez Juan J.²,García Rafael²,Senichev Alexander⁴,Lienau Christoph⁵,Calleja Enrique¹,Nötzel Richard⁶

Affiliation:

1. Universidad Politécnica de Madrid 1 Instituto de Sistemas Optoelectrónicos y Microtecnología, , Ciudad Universitaria s/n, 28040 Madrid, Spain

2. Universidad de Cádiz 2 Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, , Puerto Real, 11510 Cádiz, Spain

3. IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz 3 , 11510 Cádiz, Spain

4. Max Planck Institute of Microstructure Physics 4 , Weinberg 2, 06120 Halle, Germany

5. Carl von Ossietzky Universität Oldenburg 5 Institute of Physics and Center of Interface Science, , Ammerländer Heerstr. 114-118, 26129 Oldenburg, Germany

6. Universitá di Milano-Bicocca 6 L-NESS and Dipartimento di Scienza dei Materiali, , Via Cozzi 53, 20125 Milano, Italy

Abstract

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.

Funder

European Union project CRONOS

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4909515/14467475/072102_1_online.pdf

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