Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films-Reference-Cited by-同舟云学术

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Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films

Published:2021-11-01 Issue:11 Volume:9 Page:111107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Wang Xiaolei¹^ORCID,Zhang Chen²,Yang Qianqian¹,Liu Lei²^ORCID,Pan Dong²^ORCID,Chen Xue³,Deng Jinxiang¹^ORCID,Zhai Tianrui¹^ORCID,Deng Hui-Xiong²^ORCID

Affiliation:

1. School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0071093

Reference40 articles.

1. High K/sub u/ materials approach to 100 Gbits/in/sup 2/

2. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

4. Switching energy-delay of all spin logic devices

5. Current‐Induced Helicity Reversal of a Single Skyrmionic Bubble Chain in a Nanostructured Frustrated Magnet

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic and magneto-transport properties of non-collinear antiferromagnetic Mn3Ge epitaxial films;APL Materials;2024-07-01

2. Strain- and Temperature-Modulated Growth of Mn3Ga Films;Journal of Electronic Materials;2023-12-01

3. Engineering of perpendicular magnetic anisotropy in half-metallic magnetic Heusler epitaxial thin films;Physical Review Applied;2023-11-07

4. Crystalline and transport characteristics of ferrimagnetic and antiferromagnetic phases in Mn3Ga films;APL Materials;2023-10-01

5. Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation;Applied Surface Science;2022-11

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