Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application-Reference-Cited by-同舟云学术

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Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

Published:2012-04-02 Issue:14 Volume:100 Page:143901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Hyunju,Tachibana Tomihisa,Ikeno Norihiro,Hashiguchi Hiroki,Arafune Koji,Yoshida Haruhiko,Satoh Shin-ichi,Chikyow Toyohiro,Ogura Atsushi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3701280

Reference23 articles.

1. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

2. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

3. 19.4%-efficient large-area fully screen-printed silicon solar cells

4. 19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon

5. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

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1. Addressing separation and edge passivation challenges for high efficiency shingle heterojunction solar cells;Solar Energy Materials and Solar Cells;2023-01

2. Performance promotion of aluminum oxide capping layer through interface engineering for tunnel oxide passivating contacts;Solar Energy Materials and Solar Cells;2022-09

3. Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x;IEEE Journal of Photovoltaics;2022-07

4. Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate;Japanese Journal of Applied Physics;2019-11-22

5. Optimization of ALD $$\hbox {Al}_{2}\hbox {O}_{3}$$ process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell;Applied Physics B;2019-06

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