Effect ofin-situoxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3697830
Reference23 articles.
1. Graphene growth by molecular beam epitaxy on the carbon-face of SiC
2. Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
3. Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)
4. Graphene Epitaxy by Chemical Vapor Deposition on SiC
5. Graphene and Graphene Oxide: Synthesis, Properties, and Applications
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An atomic carbon source for high temperature molecular beam epitaxy of graphene;Scientific Reports;2017-07-26
2. From Solid Carbon Sources to Graphene;Chinese Journal of Chemistry;2015-10-28
3. Abnormal hopping conduction in semiconducting polycrystalline graphene;Physical Review B;2013-07-11
4. Publisher’s Note: “Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy” [Appl. Phys. Lett. 100, 133107 (2012)];Applied Physics Letters;2012-06-18
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