Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion-Reference-Cited by-同舟云学术

Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion

Published:2019-09-23 Issue:13 Volume:115 Page:133104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huo Jinpeng¹^ORCID,Zou Guisheng¹,Lin Luchan²,Wang Kehong³,Xing Songling¹^ORCID,Zhao Guanlei¹,Liu Lei¹^ORCID,Norman Zhou Y.¹⁴

Affiliation:

1. Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China

2. Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland

3. School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

4. Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5115335