Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding-Reference-Cited by-同舟云学术

Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding

Published:2021-10-01 Issue:10 Volume:11 Page:105114
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sittimart Phongsaphak¹²^ORCID,Ohmagari Shinya¹³^ORCID,Matsumae Takashi⁴^ORCID,Umezawa Hitoshi³^ORCID,Yoshitake Tsuyoshi²^ORCID

Affiliation:

1. Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Shuku-machi, Tosu, Saga 841-0052, Japan

2. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan

3. Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

4. Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062531

Reference33 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. Recent progress in Ga2O3power devices

3. Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy