Multilevel HfO2-based RRAM devices for low-power neuromorphic networks-Reference-Cited by-同舟云学术

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Published:2019-08 Issue:8 Volume:7 Page:081120
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Milo V.¹^ORCID,Zambelli C.²^ORCID,Olivo P.²^ORCID,Pérez E.³^ORCID,K. Mahadevaiah M.³^ORCID,G. Ossorio O.⁴^ORCID,Wenger Ch.³⁵^ORCID,Ielmini D.¹^ORCID

Affiliation:

1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, 20133 Milano, Italy

2. Dipartimento di Ingegneria, Università degli Studi di Ferrara, Via G. Saragat 1, 44122 Ferrara, Italy

3. IHP–Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

4. Dpto. Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain

5. Brandenburg Medical School Theodor Fontane, Fehrbelliner Strasse 38, 16816 Neuruppin, Germany

Funder

Deutsche Forschungsgemeinschaft

Università degli Studi di Ferrara

H2020 European Research Council

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5108650

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