Formation of chemically stable GeO2 on the Ge surface with pulsed metal–organic chemical vapor deposition-Reference-Cited by-同舟云学术

Formation of chemically stable GeO2 on the Ge surface with pulsed metal–organic chemical vapor deposition

Author:

Shibayama Shigehisa¹²,Yoshida Teppei¹,Kato Kimihiko¹,Sakashita Mitsuo¹,Takeuchi Wakana¹,Taoka Noriyuki¹,Nakatsuka Osamu¹,Zaima Shigeaki¹

Affiliation:

1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Research Fellow of the Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference29 articles.

4. K. Ikeda , M. Oda , T. Irisawa , Y. Kamimuta , Y. Moriyama , and T. Tezuka , in International SiGe Technology Device Meeting (ISTDM), 2012, p. 1.

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