Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866435
Reference22 articles.
1. N-Polar InAlN/AlN/GaN MIS-HEMTs
2. Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm
3. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
4. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
5. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
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1. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01
2. Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2020-07-27
3. Band gap bowing for high In content InAlN films;Journal of Applied Physics;2019-07-21
4. N-polar III-nitride transistors;III-Nitride Electronic Devices;2019
5. Atom probe tomography of nitride semiconductors;Scripta Materialia;2018-04
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