Muonium as a probe for defects in electron irradiated silicon-Reference-Cited by-同舟云学术

Muonium as a probe for defects in electron irradiated silicon

Published:1985-04-15 Issue:8 Volume:46 Page:759-761
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Albert E.¹,Barth S.¹,Möslang A.¹,Recknagel E.¹,Weidinger A.¹,Moser P.²

Affiliation:

1. Fakultät für Physik, Universität Konstanz, Postfach 5560, D 7750 Konstanz, Federal Republic of Germany

2. CEA-CEN, DRF-G, Physique de Solide 85X, F 38041 Grenoble, Cedex, France

Abstract

Electron irradiated silicon was investigated by the muon spin rotation (μSR) technique. We found a strong correlation between the muon spin relaxation rate and the annealing behavior of irradiation induced defects (E and A centers).

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/46/8/759/18453912/759_1_online.pdf

Reference12 articles.

1. Muon trapping at monovacancies in iron

2. Anomalous Muonium in Silicon

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