Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals
Author:
Affiliation:
1. School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0009784
Reference24 articles.
1. Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance
2. 0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
3. 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
4. 4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
5. Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
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3. Enhanced nitrogen incorporation in the 〈112̄0〉 directions on the (0001̄) facet of 4H-SiC crystals;Japanese Journal of Applied Physics;2022-08-15
4. Analysis of relaxation time for nitrogen-containing species to enter steps on misoriented (0001) surfaces during homoepitaxial growth of 4H-SiC;Japanese Journal of Applied Physics;2022-06-27
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