Ultrahigh capacitive energy storage in highly oriented Ba(ZrxTi1-x)O3 thin films prepared by pulsed laser deposition

Abstract

We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZrxTi1−xO3 (x = 0.3, 0.4, and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make them potential lead-free capacitive energy storage materials for scalable electronic devices. A high dielectric constant of ∼1400–3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 ± 1 and 156 ± 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ∼3 MV/cm with an efficiency of 72.8 ± 0.6% in an optimum 30% Zr substituted BaTiO3 composition.