An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4736591
Reference21 articles.
1. Performance of High-Power AlInGaN Light Emitting Diodes
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
4. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
5. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
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