Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1587004
Reference10 articles.
1. Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's
2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
3. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
4. Energy-band structure of GaAs and Si: Asps*k⋅pmethod
5. A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
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