Atomic ordering in GaAsP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348398
Reference28 articles.
1. Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition
2. Strained‐layer superlattices for reduction of dislocation density in GaAs1−xPxon GaAs by organometallic vapor‐phase epitaxy
3. Ordered structures and metastable alloys grown by OMVPE
4. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
5. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
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1. Fundamental Aspects of MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P;Journal of Applied Physics;2019-02-07
3. Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates;Journal of Crystal Growth;2019-01
4. Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys;Journal of Luminescence;2016-04
5. Kinetic Processes in Vapor Phase Epitaxy;Handbook of Crystal Growth;2015
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