Thermal expansion of In<i>x</i>Ga1−<i>x</i>P alloys-Reference-Cited by-同舟云学术

Thermal expansion of InxGa1−xP alloys

Published:1972-09-01 Issue:9 Volume:43 Page:3760-3762
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Kudman I.¹,Paff R. J.¹

Affiliation:

1. RCA Laboratories, Princeton, New Jersey 08540

Abstract

The coefficient of thermal expansion has been determined for a series of InxGa1−xP alloys in the temperature range 15–650 °C. This parameter was found to increase linearly from (4.75±0.1)×10−6/°C for InP to (5.91±0.1)×10−6/°C for GaP.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/jap/article-pdf/43/9/3760/18362070/3760_1_online.pdf

Reference13 articles.

1. BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS

2. Calculation of the In/Ga/P ternary phase diagram and its relation to liquid phase epitaxy

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