Wide-range tuning of the two-dimensional confinement in V-groove quantum wires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1492847
Reference19 articles.
1. Self-ordering mechanism of quantum wires grown on nonplanar substrates
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4. Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source
5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates;Applied Physics Letters;2008-10-27
2. Narrow (≈4meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays;Applied Physics Letters;2007-08-20
3. Influence of long-range substrate roughness on disorder in V-groove quantum wire structures;Journal of Applied Physics;2006-12-15
4. Epitaxial growth and optical properties of semiconductor quantum wires;Journal of Applied Physics;2006-06-15
5. Carrier relaxation inGaAsv-groove quantum wires and the effects of localization;Physical Review B;2004-11-08
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