Hot ion implantation to create dense NV center ensembles in diamond

Author:

Ngandeu Ngambou Midrel Wilfried1,Perrin Pauline2,Balasa Ionut2ORCID,Tiranov Alexey2,Brinza Ovidiu1,Bénédic Fabien1,Renaud Justine3ORCID,Reveillard Morgan3ORCID,Silvent Jérémie3,Goldner Philippe2,Achard Jocelyn1ORCID,Tallaire Alexandre2ORCID

Affiliation:

1. LSPM, CNRS, Université Sorbonne Paris Nord 1 , 99 avenue JB Clément, 93460 Villetaneuse, France

2. IRCP, CNRS, PSL Research University 2 , 11 rue Pierre et Marie Curie, 75005 Paris, France

3. Orsay Physics, ZAC Saint Charles 3 , 95 avenue des Monts Auréliens, 13710 Fuveau, France

Abstract

Creating dense and shallow nitrogen-vacancy (NV) ensembles with good spin properties is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely controlling spatial localization and density of NV color centers in diamond. However, it suffers from a low creation yield, while higher ion fluences significantly damage the crystal lattice. In this work, we realize N2+ ion implantation in the 30–40 keV range at high temperatures. At 800 °C, NV's ensemble photoluminescence emission is three to four times higher than room temperature implanted films, while narrow electron spin resonance linewidths of 1.5 MHz, comparable to well-established implantation techniques, are obtained. In addition, we found that ion fluences above 2 × 1014 ions/cm2 can be used without graphitization of the diamond film, in contrast to room temperature implantation. This study opens promising perspectives in optimizing diamond films with implanted NV ensembles that could be integrated into quantum sensing devices.

Funder

ANR Equipex+

Agence Nationale de la Recherche

Institut de chimie

ERC Advanced Grant

Publisher

AIP Publishing

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