The influence of Al composition on point defect incorporation in AlGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3679681
Reference22 articles.
1. Wavelength comparison study for bioaerosol detection
2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
3. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
4. Deep level defects and doping in high Al mole fraction AlGaN
5. A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies
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