Preparation and characterization of sol-gel derived Er3+: Al2O3-SiO2 planar waveguides

Author:

Benatsou M.1,Capoen B.1,Bouazaoui M.1,Tchana W.2,Vilcot J. P.2

Affiliation:

1. L.S.H., URA CNRS No. 249, Centre d’Etudes et de Recherches Lasers et Applications, Université de Lille I, 59655 Villeneuve d’Ascq Cedex, France

2. I.E.M.N, UMR CNRS 9929, Cité Scientifique, Avenue Poincaré—B.P. 69, 59655 Villeneuve d’Ascq Cedex, France

Abstract

Er 3+ doped aluminosilicate thin films were prepared on silica and silica Si substrates by the sol-gel method. The Er ion concentration was varied from 0.25% to 1%. Fluorescences of Er ions in the visible and infrared regions were characterized. Green and red up-conversion fluorescences centered at 548 and 655 nm for, respectively, the (2H11/2+4S3/2)→4I15/2 and 2F9/2→4I15/2 were observed. A broadband peak was observed at 1531 nm corresponding to the 4I13/2 → 4I15/2 transition, with the full width at half-maximum of 47 nm comparable to those prepared by other methods. The fluorescence lifetime of the 4I13/2 excited state was found to be constant and equal to 3.5 ms until a high Er doping of 0.5 at. %.

Publisher

AIP Publishing

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