High-performance ZnO nanowire field effect transistors-Reference-Cited by-同舟云学术

High-performance ZnO nanowire field effect transistors

Published:2006-09-25 Issue:13 Volume:89 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Chang Pai-Chun¹,Fan Zhiyong¹,Chien Chung-Jen¹,Stichtenoth Daniel²,Ronning Carsten²,Lu Jia Grace³

Affiliation:

1. University of California Department of Chemical Engineering and Materials Science and Department of Electrical Engineering and Computer Science, , Irvine, California 92697

2. Universität Göttingen II. Physikalisches Institut, , 37077 Göttingen, Germany

3. University of Southern California Department of Physics and Astronomy, , Los Angeles, California 90089

Abstract

ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2357013/13522651/133113_1_online.pdf

Reference24 articles.

1. Extraordinary Mobility in Semiconducting Carbon Nanotubes

2. High Performance Silicon Nanowire Field Effect Transistors

3. MOVPE selectively grown GaAs nano-wires with self-aligned W side gate

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5. ZnO nanowire field-effect transistor and oxygen sensing property

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