Recombination dynamics for photogenerated carriers in germanium-doped ZnSe epilayers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1461899
Reference16 articles.
1. Impurity Levels of Alkaline Metals in Zincselenide Single Crystals Examined by Photoluminescence
2. Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
3. On degradation of ZnSe‐based blue‐green diode lasers
4. Review of Compensation Centres in ZnSe:N
5. Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers
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1. Optical properties and electrical properties of heavily Al-doped ZnSe layers;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03
2. Electrical properties of conductive and resistive ZnSe layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
3. Thermal excitation effects of photoluminescence of annealed GaInNAs∕GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy;Materials Science in Semiconductor Processing;2003-10
5. PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers;Journal of Crystal Growth;2003-04
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