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Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

  • Published:2016-07-14 Issue:2 Volume:120 Page:024502
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Butera S.1,Lioliou G.1ORCID,Krysa A. B.2ORCID,Barnett A. M.1

Affiliation:

1. Semiconductor Materials and Device Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT, United Kingdom

2. EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

Funder

Science and Technology Facilities Council (STFC)

Royal Society

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV;Journal of Applied Physics;2021-06-28

2. X-/γ-ray photon counting spectroscopy with an AlInP array;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-06

3. Al0.6Ga0.4As x-ray avalanche photodiodes for spectroscopy;Semiconductor Science and Technology;2020-08-12

4. GaAs/Al0.8Ga0.2As separate absorption and multiplication region x-ray spectroscopic avalanche photodiodes;Journal of Applied Physics;2020-07-07

5. AlInP X-ray photodiodes without incomplete charge collection noise;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-04
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