Valence states and the magnetism of Eu ions in Eu-doped GaN-Reference-Cited by-同舟云学术

Valence states and the magnetism of Eu ions in Eu-doped GaN

Published:2020-02-24 Issue:8 Volume:127 Page:083901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nunokawa Takumi¹,Fujiwara Yasufumi¹,Miyata Yusuke²,Fujimura Norifumi²,Sakurai Takahiro³,Ohta Hitoshi⁴,Masago Akira⁵,Shinya Hikari⁵⁶,Fukushima Tetsuya⁵⁷,Sato Kazunori¹⁵,Katayama-Yoshida Hiroshi⁸

Affiliation:

1. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 565-8531, Japan

3. Center for Support to Research and Education Activities, Kobe University, Nada, Kobe 657-8501, Japan

4. Molecular Photoscience Research Center, Kobe University, Nada, Kobe 657-8501, Japan

5. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

6. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

7. The Institute of Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

8. Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-8656, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5135743

Reference24 articles.

1. Growth of Eu Doped GaN and Electroluminescence from MIS Structure

2. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

3. Efficient luminescent center by codoping (Eu,Mg,O) into GaN

4. Computational nano-materials design for circularly polarized luminescence in (Eu,Mg,O)-codoped GaN

5. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

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1. Europium diffusion in ammonothermal gallium nitride;Applied Surface Science;2023-07

2. Rare-earth defects in GaN: A systematic investigation of the lanthanide series;Physical Review Materials;2022-04-15

3. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04

4. Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes;Superlattices and Microstructures;2021-02

5. Defects in Semiconductors;Journal of Applied Physics;2020-05-21