Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366084
Reference11 articles.
1. Quantum‐well infrared photodetectors
2. 9-μm cutoff 256×256 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector hand-held camera
3. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
4. Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−xbarriers
5. Generalized superlattice K·p theory and intersubband optical transitions
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1. Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array;Opto-Electronics Review;2024-01-03
2. Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors;IEEE Electron Device Letters;2022-08
3. Nature Allows High Sensitivity Thermal Imaging With Type-I Quantum Wells Without Optical Couplers: A Grating-Free Quantum Well Infrared Photodetector With High Conversion Efficiency;IEEE Journal of Quantum Electronics;2021-04
4. High-x InP/InxGa1−xAs quantum well infrared photodetector;Infrared Physics & Technology;2018-12
5. Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate;Infrared Physics & Technology;2007-04
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