Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction-Reference-Cited by-同舟云学术

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Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction

Published:2016-06-07 Issue:21 Volume:119 Page:214304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tien Nguyen Thanh¹^ORCID,Thao Dinh Nhu²^ORCID,Thao Pham Thi Bich¹,Quang Doan Nhat³

Affiliation:

1. College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City, Vietnam

2. Center for Theoretical and Computational Physics, College of Education, Hue University, 34 Le Loi Street, Hue City, Vietnam

3. Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi, Vietnam

Funder

National Foundation for Science and Technology Development (NAFOSTED)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953030

Reference45 articles.

1. Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs

2. Oxide and Nitride Semiconductors

3. Electronic properties of two-dimensional systems

4. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

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5. Insights on modulating electronic and transport properties of the sawtooth–sawtooth penta-SiC₂ nanoribbons under uniaxial small strain by first-principles calculations;AIP Advances;2022-09-01

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