β-Gallium oxide power electronics-Reference-Cited by-同舟云学术

β-Gallium oxide power electronics

Published:2022-02-01 Issue:2 Volume:10 Page:029201
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Green Andrew J.¹^ORCID,Speck James²,Xing Grace³,Moens Peter⁴,Allerstam Fredrik⁴,Gumaelius Krister⁴,Neyer Thomas⁴,Arias-Purdue Andrea⁵,Mehrotra Vivek⁵,Kuramata Akito⁶,Sasaki Kohei⁶^ORCID,Watanabe Shinya⁶,Koshi Kimiyoshi⁶,Blevins John¹^ORCID,Bierwagen Oliver⁷^ORCID,Krishnamoorthy Sriram²^ORCID,Leedy Kevin¹^ORCID,Arehart Aaron R.⁸^ORCID,Neal Adam T.¹^ORCID,Mou Shin¹^ORCID,Ringel Steven A.⁸^ORCID,Kumar Avinash⁹^ORCID,Sharma Ankit⁹^ORCID,Ghosh Krishnendu⁹^ORCID,Singisetti Uttam⁹^ORCID,Li Wenshen²^ORCID,Chabak Kelson¹,Liddy Kyle¹^ORCID,Islam Ahmad¹^ORCID,Rajan Siddharth⁸,Graham Samuel¹⁰^ORCID,Choi Sukwon¹¹^ORCID,Cheng Zhe¹²^ORCID,Higashiwaki Masataka¹³^ORCID

Affiliation:

1. Air Force Research Laboratory, Wright Patterson Air Force Base, Ohio 45433, USA

2. University of California, Santa Barbara, California 93106, USA

3. Cornell University, Ithaca, New York 14850, USA

4. ON Semiconductor, Oudenaarde 9700, Belgium

5. Teledyne, Thousand Oaks, California 91360, USA

6. Novel Crystal Technology, Inc., Tokyo 100-0005, Japan

7. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund, Berlin 10117, Germany

8. Ohio State University, Columbus, Ohio 43210, USA

9. University at Buffalo, Buffalo, New York 14260, USA

10. Georgia Institute of Technology, Atlanta, Georgia 30332, USA

11. Penn State University, State College, Pennsylvania 16802, USA

12. University of Illinois, Urbana-Champaign, Illinois 61801, USA

13. National Institute of Information and Communications Technology, Tokyo 184-8795, Japan

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060327

Reference209 articles.

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3. H. W. Then, C. Y. Huang, B. Krist, K. Jun, K. Lin, N. Nidhi, T. Michaelos, B. Mueller, R. Paul, J. Peck, W. Rachmady, S. Dasgupta, D. Staines, T. Talukdar, N. Thomas, T. Tronic, P. Fischer, W. Hafez, M. Radosavljevic, P. Agababov, I. Ban, R. Bristol, M. Chandhok, S. Chouksey, and B. Holybee, in 2019 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2019), pp. 17.3.1–17.3.4.

4. H. Umezawa, in 2020 IEEE International Electron Devices Meeting (IEEE, 2020), pp. 5.6.1–5.6.4.

5. Gallium Oxide

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