Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

Published:1996-01-29 Issue:5 Volume:68 Page:667-669
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Götz W.,Johnson N. M.,Walker J.,Bour D. P.,Street R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116503

Reference11 articles.

Cited by 469 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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