Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2
Author:
Affiliation:
1. Department of Engineering, Cambridge University, Cambridge CB2 1PZ, United Kingdom
2. College of Engineering, Swansea University, Swansea SA1 8EN, United Kingdom
Funder
China Sponsorship Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5008959
Reference47 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
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