Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368595
Reference18 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering
3. Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
4. MBE growth and properties of ZnO on sapphire and SiC substrates
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