Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films
Author:
Affiliation:
1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
2. Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Kyungki-Do, 445-701, Korea
Funder
Samsung
Ministry of Knowledge Economy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/8/1.4928447.pdf?itemId=/content/aip/journal/adva/5/8/10.1063/1.4928447&mimeType=pdf&containerItemId=content/aip/journal/adva
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1. Storage-class memory: The next storage system technology
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4. Phase-change random access memory: A scalable technology
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