Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering-Reference-Cited by-同舟云学术

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Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

Published:2015-07-28 Issue:4 Volume:118 Page:045713
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tandon Nandan¹²,Albrecht J. D.¹,Ram-Mohan L. R.³

Affiliation:

1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, USA

2. Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA

3. Departments of Physics and Electrical and Computer Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA

Funder

Office of Naval Research (ONR)

Defense Advanced Research Projects Agency (DARPA)

Air Force Research Laboratory (AFRL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927530

Reference21 articles.

1. Calculation of theΓ−ΔElectron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon

2. Electron-phonon interactions and superconductivity in Si, Ge, and Sn

3. Abinitioanalysis of the electron‐phonon interaction in silicon

4. Electron-phonon matrix elements and deformation potentials in silicon and germanium in the quasi-ion model

5. First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering

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4. Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications;Materials Science in Semiconductor Processing;2024-03

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