Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338985
Reference72 articles.
1. a-Si:H Deposition from SiH4and Si2H6rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition
2. Towards high deposition rates of a-Si:H: The limiting factors
3. a-Si:H deposited at high rate on the cathode of a rf-PECVD reactor
4. Effects of inert gas dilution of silane on plasma‐deposited a‐Si:H films
5. High-Deposition-Rate a-Si:H Through VHF-CVD of Argon-Diluted Silane
Cited by 94 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric Barrier Discharge Plasma Deoxidation of Copper Surfaces in an Ar/SiH4 Atmosphere;Plasma Chemistry and Plasma Processing;2022-06-23
2. Effect of hydrogen dilution on the silicon cluster volume fraction of a hydrogenated amorphous silicon film prepared using plasma-enhanced chemical vapor deposition;Current Applied Physics;2020-01
3. Comparative study of electron temperature in cascaded arc Ar/N2 plasma using laser Thomson scattering combined optical emission spectroscopy approach;AIP Advances;2019-12-01
4. Numerical Modeling of Plasma Silicon Discharge for Photovoltaic Application;Materials Today: Proceedings;2019
5. Expanding Thermal Plasma Deposition of Al-Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms;Plasma Processes and Polymers;2015-11-30
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3