Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy

Published:2018-04-28 Issue:16 Volume:123 Page:161419
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Inaba Tomohiro¹^ORCID,Kojima Takanori¹^ORCID,Yamashita Genki²,Matsubara Eiichi²³,Mitchell Brandon⁴,Miyagawa Reina⁵^ORCID,Eryu Osamu⁵,Tatebayashi Jun¹,Ashida Masaaki²^ORCID,Fujiwara Yasufumi¹

Affiliation:

1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

3. Department of Physics, Osaka Dental University, 8-1 Kuzuha Hanazono, Hirakata, Osaka 573-1121, Japan

4. Department of Physics, West Chester University, West Chester, Pennsylvania 19383, USA

5. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5011283

Reference33 articles.

1. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

2. Prospects for rare earth doped GaN lasers on Si

3. White light emitting diodes with super-high luminous efficacy

4. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

5. InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

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