Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)-Reference-Cited by-同舟云学术

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Published:2014-05-07 Issue:17 Volume:115 Page:172615
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thomas Luc,Jan Guenole,Zhu Jian,Liu Huanlong,Lee Yuan-Jen,Le Son,Tong Ru-Ying,Pi Keyu,Wang Yu-Jen,Shen Dongna,He Renren,Haq Jesmin,Teng Jeffrey,Lam Vinh,Huang Kenlin,Zhong Tom,Torng Terry,Wang Po-Kang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4870917

Reference41 articles.

1. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

2. Progress and outlook for MRAM technology

3. Tunneling between ferromagnetic films

4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Cited by 203 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excellent Temperature Dependence of Retention Energy and Large Tunnel Magnetoresistance of MTJs With Strain-Induced Magnetic Anisotropy for SOT-MRAMs With High Write Efficiency;IEEE Transactions on Magnetics;2024-09

2. Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing;Applied Physics Letters;2024-07-01

3. Write-error reduction in voltage-driven magnetization switching using a recording layer with low magnetic damping;Physical Review Applied;2024-05-03

4. Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions;IEEE Transactions on Magnetics;2024-05

5. Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing;Advanced Electronic Materials;2024-04-15