Effect of lattice mismatch on large area domain uniformity of (BiTm)3(GaFe)5O12 thin films prepared by liquid-phase epitaxy for magneto-optical imaging system

Author:

Li Zhuo12ORCID,Li Han12,Zhang Ding12,Zhang Yuanjing12,Wang Feng12,Yang Shuting12,Ru Zehao12,Xiang Fuliang12,Sun Hanyu12,Zhang Huaiwu12,Yang Qinghui12ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China 1 , Chengdu 610054, People’s Republic of China

2. School of Electronic Science and Engineering, University of Electronic Science and Technology of China 2 , Chengdu 610054, China

Abstract

To study the effect of large area uniform garnet film on the consistency of image quality of a magneto-optical imaging system, the effect of lattice mismatch on a large area uniform domain structure of magneto-optical materials was studied. In this paper, (BiTm)3(GaFe)5O12 thin garnet films with different stress were prepared on the surface of gadolinium gallium garnet by liquid phase epitaxy. The results show that the magnetic hysteresis mechanism exists in the (BiTm)3(GaFe)5O12 thin films with tensile stress, and the domains can preferentially respond to magnetic signals in very small regions. This is mainly the phenomenon of magnetic domain partitioning caused by cracks. In addition, the non-uniform distribution of coercive force in a large range is the main cause of hysteresis. The thin films with weak compressive stress (BiTm)3(GaFe)5O12 are uniformly distributed over a large area.

Funder

National Natural Science Foundation of China

Sichuan Science and Technology Support Program

National Key Research and Development Program

Publisher

AIP Publishing

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